In a press release, Intel Labs and Components Research announced that they have achieved the largest production yield ever in the manufacture of silicon spin qubit devices at the Gordon Moore Park Research and Development Center in Hillsboro.
The research was conducted using Intel's second generation test spin chips. Thanks to the Intel cryoprober, a device for testing quantum dots that operates at cryogenic temperatures (1.7 Kelvin or -271.45 degrees Celsius), the team of researchers isolated 12 quantum dots and 4 sensors. br>
This is the largest silicon electron spin device ever made, with a single electron at each location within an entire 300mm silicon wafer. The use of cryoprober, combined with robust software automation, has allowed the realization of more than 900 single quantum dots and more than 400 double dots on the last electron, which can be characterized to one degree above absolute zero in less than 24 hours.
A photo shows Intel's fully processed 30 millimeter silicon spin qubit wafer. (Credit: Intel Corporation) James Clarke, Intel's director of Quantum Hardware, said:
Intel continues to make progress in making silicon spin qubits manufactured using its own transistor manufacturing technology. The high yield and uniformity achieved shows that fabricating quantum chips using the proven transistor process node technology is a valid strategy and an important indicator of success in moving towards commercialization. In the future we will continue to improve the quality of these devices and develop systems on a larger scale.
The results of this research were presented at the Silicon Quantum Electronics Workshop 2022 in Orford, Québec, Canada last October 5th.