Micron introduces the first 232-layer 3D NAND chip

Micron introduces the first 232-layer 3D NAND chip

Micron yesterday announced the first 232-layer 3D NAND chip, which the company intends to use for several products, including, of course, SSDs. The device, based on the CMOS under array (CuA) architecture, uses the NAND string stacking technique to stack two 3D NAND arrays on top of each other. The chip, with a 3D NAND TLC structure, has a capacity of 1Tb, equal to 128GB, and, thanks to the use of 232 layers, it will be possible to reduce the size of the die, leading to a decrease in production costs and, consequently, lower prices for end users.

Photo Credit: Micron Unfortunately, the company has not released precise technical data at the moment, but the TLC 232L 3D NAND chips should offer higher performance than to those 3D NAND still on the market, a fundamental feature to make more use of the PCI Express 5.0 interface. Additionally, memories will need less power, providing an added benefit especially for their use in mobile devices (such as notebooks).

We have optimized the [232-layer 3D NAND] technology to what we need to make the world's fastest NAND and SSD products for datacenters and customers. The combination of controllers, both internal and external, is an important element of our focus on vertical product integration to ensure we optimize NAND technology and controllers based on what we need to deliver leading products in the future.

Micron expects to increase production of these chips towards the end of 2022, while the first devices equipped with 232-layer memories will hit the market over the next year.

Photo Credit: Micron